Abstract
The recombination dynamics of GaAs multiple quantum wells as a function of barrier widths LB are studied in a semiconductor in the range between LB=0.87 nm (superlattice) and LB=18.1 nm (uncoupled wells) by means of cathodo- and photoluminescence. With decreasing LB the nonradiative recombination rate is found to be drastically enhanced, where-as the radiative recombination probability decreases. Thus a pronounced decrease of the quantum efficiency results. The controlled variation of the barrier width is found to be decisive for an unambiguous identification of the origin of the traps which are responsible for the nonradiative processes: Comparison with a theoretical calculation shows that they are localized at the heterointerfaces and not in the barriers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
