Abstract

In this work, we fabricated a novel heterojunction, Silicon-based solar cell. We used nickel oxide NiO thin films on porous silicon PS separated by a thin silicon dioxide SiO2 carrier-selective layer p-NiO/(SiO2) PS/(n+) Si (Silicon). For comparison, we also manufactured a p-NiO/(n+) Si device. The Atomic Force microscopy AFM and scanning electron microscopy SEM images highlighted the nanoporous pyramidal like structures for p-NiO/(SiO2) PS/(n+) Si devices that decreased the optical reflectivity to 2 %. From the electrochemical study, low resistance and high minority carrier lifetime (1.44 ms) were estimated for p-NiO/(SiO2) PS/n+-Si. The results are promising and agree with a high power conversion efficiency of 19.52 % for p-NiO/(SiO2) PS/n+-Si versus 3.8 % for p-NiO/Si.

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