Abstract
Minority carrier lifetimes in nitrogen implanted GaAs1-x P x (x=0.4; 0.65) were measured at 77K by an optical phase shift method as a function of nitrogen dose and annealing temperature in order to investigate the dependence of the lifetime on the concentration of nitrogen isoelectronic traps. A large increase in the lifetime was observed after nitrogen implantation followed by annealing at and above 800°C. The maximum lifetimes were 22ns for GaAs0.35P0.65 and 6.7 ns for GaAs0.6P0.4. They were obtained by implantation to a dose of 5×1013 cm−2 in GaAs0.35P0.65 and 1013 cm−2 in GaAs0.6P0.4. The lifetime after nitrogen implantation followed by annealing was longer by a factor of 6–7 than that of the unimplanted sample.
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