Abstract
Fast annealing was used to improve the electronic properties of ferroelectric and buffer layers in Pt/SrBi2Ta2O9(SBT)/SiO2/n-Si metal-ferroelectric-insulator-semiconductor (MFIS) structures. Damage of the SiO2 layer due to SBT constituent diffusion was reduced significantly as annealing time at high temperature of the ferroelectric SBT can be reduced from 1 − 2 hours to few minutes. Leakage currents through both the SiO2 buffer and the SBT ferroelectric layers were decreased in the sample prepared by using fast annealing. The C-V and the I-V characteristics also show electronic improvement at the interface and reduced of thermal diffusion of constituent elements. It is shown by SEM and atomic force microscopy(AFM) images revealed that the SBT thin film with fast annealing had a gets better surface morphology. The retention time of a capacitor with a MFIS structure in the ON and the OFF states was improved, and the maximum is retention time was longer than 23 days.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
