Abstract
The insertion of a Co single atomic layer into multiferroic interfaces is examined from first principles taking interfaces between BaTiO3 and Fe3Si as an example. We demonstrate that insertion of a Co atomic layer strongly prevents Si from being exposed to the interface. This protecting effect of Co makes the interface magnetoelectric constant of Fe3Si/Co/BaTiO3(001) remarkably large with 1.4 as, which makes contrast with the reduction of the interface multiferroicity by Si at the Fe3Si/BaTiO3(001) interface. The stability of the Co monolayer and the origin of the large magnetoelectric effect are clarified.
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