Abstract
We study the effect of additional below bandgap optical excitation 1 = 1.17 eV ( = 1.06 µm) on the photoluminescence of self-assembled InAs/GaAs quantum dots. We observe a relative increase of the photoluminescence intensity by up to 40%. The analysis of the experimental results is based on a model where a carrier is released from a deep trap as a result of a photoionization process.
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