Abstract
We have fabricated Ge20Ga10S70 glasses doped with 1.0 at% Er and annealed them to create chalcogenide glass-ceramics. We further characterized their optical transmission, luminescence, and microstructure for investigating the mechanism of the fluorescence enhancement. The results showed that, Ga2S3 and GeS2 crystals are precipitated successively, the transmittance of the glass-ceramics decreases, and the transmission edge shifts towards longer wavelengths with prolonged annealing time. Photoluminescence (PL) intensity at 1.54 μm in glass-ceramics with 20 h annealing time is twice than that in the base glass. From the similar evolution of PL and XRD intensity, we concluded that the luminescence enhancement is related to the Ga2S3 crystals in glass-ceramics. The Er ions are registered near tht Ga2S3 crystalline grains with a size of 50 nm as evident by elemental mapping. The results are helpful to optimize the chalcogenide glass components doped with REI and improve the solubility of REI.
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