Abstract
Potentialities of rapid thermal annealing to enhance the photoluminescence emission of Si nanocrystals in SiO2 have been investigated. Ion implantation was used to synthesize specimens of SiO2 containing excess Si with different concentrations. Si precipitation to form nanocrystals in implanted samples takes place with a conventional furnace anneal. The photoluminescence intensity and the peak energy of emission from Si nanocrystals depend on implanted ion fluence. Moreover, the luminescence intensity is strongly enhanced with a rapid thermal anneal prior to a conventional furnace anneal. The luminescence intensity, however, decreases with a rapid thermal anneal following a conventional furnace anneal. It is found that the order of heat treatment is an important factor in intensities of the luminescence. Moreover, the luminescence peak energy is found to be dependent, but a little, on thermal history of specimens. Based on our experimental results, we discuss about the mechanism of an enhancement of the photoluminescence, together with the mechanism of photoemission from encapsulated Si nanocrystals produced in a SiO2 matrix by ion implantation and annealing.
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