Abstract
Effects of oxidation induced Ge condensation on local strains in Si microstructures induced by the SiGe stressor were investigated. The strain ratio in the Si microstructures increased by the Ge condensation, due to piled-up Ge atoms at SiO2/SiGe interfaces. However, the strains were relaxed by defect generation, if the concentration of piled-up Ge exceeded a critical value (~40%). Thus, a possibility to enhance local strains by oxidation induced Ge condensation was demonstrated.
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