Abstract
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquids have been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As a result, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafer sample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs can be promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapid and cost-effective.
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