Abstract
The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs at an injection current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs at an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-output-power InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.
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