Enhancement of light emission of a low-resistivity silicon nanocrystal thin film: A simulational and experimental study

Abstract

A silicon nanocrystal (Si NC) white light-emitting (λ = ∼400–900 nm) thin film with a relatively low resistivity of 1.6 × 104 Ω m has been prepared as an active medium for electrically driven Si light sources. The average size of Si NC is 2.4 ± 0.4 nm. To enhance the light emission efficiency of this low-resistivity Si NC thin film, approach of hydrogen passivation suitable for the traditional high-resistivity (1.2 × 107 Ω m in this work for example) red light-emitting Si NC thin film has been tried and found unavailable unfortunately. Our first principles simulation shows that Si NCs bonded to −O, −NH2, −OH, and −H ligands are responsible for red, green, and blue (RGB) primary color emissions in this white light-emitting sample, respectively. Passivation of the sample in NH3 and H2O atmosphere is then conducted, aiming to increase the number of the RGB light emitters. The light emission is significantly enhanced, with photoluminescence intensity, photoluminescence quantum yield, electroluminescence intensity, and net optical gains increased by factors of 4.6, 4.2, 4.0, and ∼3.0, respectively, after 10-day passivation. Further enhancements are expected for longer passivation.