Abstract
In this work, the enhancement of light-extraction efficiency for AlInGaP-based light-emitting diodes (LEDs) by using porous alumina is proposed. The employment of the porous alumina increases the total power by 6.35%, while the optical spectrum is unchanged. By nano-texturing the thin-film surface, it is much easier for light to escape from porous alumina light- emitting diodes (PA-LEDs). The pore distances about 25~80 nm under anodized voltage ranges of 10~30 V in the sulfuric acid. Besides, nanopores of porous alumina also can be enlarged (~0.8nm/per min) in the phosphoric acid. The diameter of the nanopores (20-60nm) and the interpore distance (25-80nm) can be modulated by anodic parameters.
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