Abstract
Enhancement in room temperature infrared transmission (1.8–50 μm wavelength range) has been achieved in GaSb bulk crystals by tellurium (Te) compensation. Lattice vibrations have been observed at 488, 408, 355, 323, 327, 270, 255, 246, 237, 231, 221, 214, and 210 cm−1, respectively, which coincide with the theoretically predicted band positions from two-, three-, and four-phonon processes. The clear observation of lattice vibrations indicates the suppression of free carrier absorption in Te-compensated GaSb. Electrical characterization indicates that Te compensates native defects in GaSb that contribute to the enhancement in the transmission properties of GaSb bulk crystals.
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