Abstract
The enhancement of hot electron generation using plasmonic nanostructures is a promising strategy for developing photovoltaic devices. Here, we show that hot electron flow generated in plasmonic Au/TiO2 nanodiodes by incident light can be amplified when PbS quantum dots are deposited onto the surface of the nanodiodes. The effect is attributed to efficient extraction of hot electrons via a three-dimensional Schottky barrier, thus giving new pathways for hot electron transfer. We also demonstrate a correlation between the photocurrent and Schottky barrier height when using PbS quantum dots with varying size and ligand treatments that allow us to control the electric properties (e.g., band gap and Fermi level, respectively) of the PbS quantum dots. This simple method introduces a new technique for further improving the power conversion efficiency of thin-film photovoltaic devices.
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