Abstract
We report the enhancement of hole injection using AgOx layer between Ag anode and 4,4′-bis[N-(1-naphtyl)-N-phenyl-amino]biphenyl in top-emitting organic light-emitting diode (OLED). The turn-on voltage of OLEDs decreased from 17 to 7V as Ag changed to AgOx by the surface treatment using O2 plasma. Synchrotron radiation photoelectron spectroscopy results showed that the work function increased about 0.4eV by the O2 plasma treatment. This led to the decrease of the energy barrier for hole injection, reducing the turn-on voltage of OLEDs.
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