Abstract
The performance of a GaAs p–n junction solar cell was investigated by coating the device with 110nm thick ZnO sol–gel anti-reflection film. A post-furnace thermal annealing at 150°C for 30min was performed on the ZnO film after it was spin coated on the device with a speed of 8000rpm. Ellipsometry was used to measure the reflectance, thickness, and the refractive index of the ZnO film. The solar cell performance was investigated by using the current–voltage technique from which the power conversion efficiency was extracted. The spectral response and quantum efficiency were also measured for the solar cell. An enhancement, after utilizing the ZnO anti-reflection coating, was observed on the order of 32%, 38, and 51% for the power conversion efficiency, spectral response, and quantum efficiency, respectively.
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