Abstract
Abstract We report thermal annealing and 100 MeV Si 8+ swift heavy ion irradiation effects on the structural and magnetic properties of Ni-implanted HfO 2 thin films. At low Ni doping concentration (∼1%), HfO 2 thin films show ferromagnetic behavior. We clearly demonstrate the cluster free nature of our film using cross-sectional high resolution transmission microscopy and magnetization vs. temperature data. Rutherford backscattering spectrometry is used to estimate the film thickness and to establish that Ni-ions are placed in the HfO 2 matrix. By comparing the results for the annealed and swift heavy ion irradiated samples, it is concluded that the enhancement in magnetic signal is closely related to the dispersion/diffusion of implanted Ni and defect creation such as oxygen vacancies. The results of magnetic force microscopy supported the observation of room temperature ferromagnetism in Ni-implanted HfO 2 films.
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