Abstract
In this work, the ferroelectric characteristic of a 5 nm Hf0.5Zr0.5O2 (HZO) metal-ferroelectric-insulator-semiconductor (MFIS) device is enhanced through strained complementary metal oxide semiconductor (CMOS)-compatible TiN electrode engineering. Strained TiN top-layer electrodes with different nitrogen (N) concentrations are deposited by adjusting the sputtering process conditions. The TiN electrode with 18% N exhibits a compressive characteristic, which induces tensile stress in a 5 nm HZO film. A device with 18% N in TiN shows a higher remanent polarization (2Pr) and larger capacitance value than the compared sample, indicating that the strained TiN is promising for enhancing the ferroelectricity of sub-5 nm HZO devices.
Highlights
Technologies by Using a Strained TiNHfO2 -based dielectrics are promising ferroelectric materials for nonvolatile memory, negative-capacitance FETs, and neuromorphic applications because of their compatibility with complementary metal-oxide-semiconductor (CMOS) technology [1,2]
To further enhance the performance in ferroelectric FETs (FeFETs) and negative-capacitance FETs (NCFETs), it is important to enhance the ferroelectricity in metal-ferroelectric-insulator-semiconductor (MFIS) devices, which is the major foundation for high-performance FeFETs and NCFETs
Is relatively thin compared with the bottom electrode and top electrode, the reporting literature only consider the coefficient of thermal expansion (CTE) between the bottom electrode and top electrode [6]
Summary
HfO2 -based dielectrics are promising ferroelectric materials for nonvolatile memory, negative-capacitance FETs, and neuromorphic applications because of their compatibility with complementary metal-oxide-semiconductor (CMOS) technology [1,2]. Studies have reported that the strain exerted through the different electrodes and substrates [4,5,6,7] can be used as an alternative method of inducing the ferroelectric characteristic because the tensile stress along the in-plane direction can enhance transformation from the tetragonal phase to the orthorhombic phase. To further enhance the performance in ferroelectric FETs (FeFETs) and negative-capacitance FETs (NCFETs), it is important to enhance the ferroelectricity in metal-ferroelectric-insulator-semiconductor (MFIS) devices, which is the major foundation for high-performance FeFETs and NCFETs. in this study, we report, to the best of our knowledge for the first time, using strained TiN as a top electrode in 5 nm
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
