Abstract
InGaN/GaN multiple quantum wells grown by metal–organic chemical vapor deposition were irradiated with the electron-beam from a low energy accelerator. The electron irradiation induced a redshift by 50 meV in the photoluminescence spectra of the electron-irradiated InGaN/GaN quantum wells, irrespective of the exposure time to the electron beam, which ranges from 10 to 1000 s. The localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the irradiated samples. Analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of exciton–phonon coupling, indicating that the excitons are more strongly localized in the irradiated InGaN wells. The changes in photoluminescence spectra in the irradiated InGaN/GaN quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation.
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