Abstract
AbstractNew approaches to decrease the electron–polar optical (PO) phonon scattering rate in double heterostructures by using phonon barriers (reflective to PO phonons and transparent for electrons) are proposed. Twofold decrease of the electron–PO phonon scattering rate in the AlGaAs/GaAs/AlGaAs quantum well by inserting the InAs phonon barriers is achieved. The enhancement of high electric field drift velocity in the AlGaAs/GaAs/AlGaAs heterostructure with the inserted one monolayer InAs phonon barriers compared with that heterostructure without barriers is observed experimentally. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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