Abstract
Abstract Large forming voltages, low resistive and magnetic switching ratios and poor reversibility have impeded the practical applications of electrical manipulation of magnetic properties through a resistive switching process. Here we show that all above parameters can be improved greatly through Co doping in Ti/TiO 2 /Pt device. A comparison of different mechanism of electrically controlled nonvolatile ferromagnetism in Co-doped and undoped TiO 2 films is proposed. These results will provide a fundamental understanding for the electrically control of ferromagnetism in doped and undoped metal-oxide films and may be extended to certain materials in addition to Co doped TiO 2 .
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.