Abstract
Abstract Large forming voltages, low resistive and magnetic switching ratios and poor reversibility have impeded the practical applications of electrical manipulation of magnetic properties through a resistive switching process. Here we show that all above parameters can be improved greatly through Co doping in Ti/TiO 2 /Pt device. A comparison of different mechanism of electrically controlled nonvolatile ferromagnetism in Co-doped and undoped TiO 2 films is proposed. These results will provide a fundamental understanding for the electrically control of ferromagnetism in doped and undoped metal-oxide films and may be extended to certain materials in addition to Co doped TiO 2 .
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