Enhancement of Electrical and Optical Properties of Silicon Quantum Dot Light-Emitting Diodes with ZnO Doping Layer

Abstract

We have investigated the effect of a ZnO doping layer on a silicon quantum dot (Si QD) light-emitting diode (LED). A highly doped ZnO layer was grown on a Si QD layer at room temperature using a radio-frequency sputtering. The power efficiency of Si QD LED containing the ZnO layer were greatly improved by 226% due to an increase in the electron injection through the highly doped ZnO layer into Si QDs embedded in the silicon nitride film and the high transparency of the ZnO layer.