Enhancement of drift-velocity overshoot in silicon due to the intracollisional field effect

Abstract

A simulation of charge quantum transport in silicon is presented. The authors discuss how effects such as energy nonconserving transitions (or collisional broadening) and intracollisional field effect influence transient transport and, in particular, drift-velocity overshoot. The analysis is based on an improved version of the quantum Monte Carlo method developed by the authors during the last few years. Results show that, for the case of silicon, the intracollisional field effect plays the dominant role in determining deviations from the semiclassical results.