Enhancement of current carrying capacity of the strained ZnSe nanowire

Abstract

The effect of strain on the current carrying capacity of ZnSe nanowire has been studied by in situ transmission electron microscopy (TEM). Under TEM inspection the strain can be created at the selected position in a single ZnSe nanowire by the compressive stress applied along its axial direction using a movable probe electrode. The induced strain is controllable in the magnitude of curvature of the ZnSe nanowire bent by careful manipulation of the movable probe electrode. In situ current-induced Joule heating has confirmed that the strained segment in a single ZnSe nanowire exhibited better ability than the unstrained segments against Joule heating. Consequently, the current carrying capacity of the ZnSe nanowire can be effectively enhanced by intentionally created strain. The experimental results have also proved that a significant increase of the electrical conductance and the thermal resistance can be achieved simultaneously in a single nanowire by the intentionally designed and created strain.