Abstract
A prominent improvement of Curie temperature under low electric fields through Mn δ-doped GaAs∕p-AlGaAs wide quantum wells is presented theoretically. The electric-field-controlled Curie temperature for different δ-doping positions and well widths has been investigated by means of the numerical self-consistent calculation. For quantum wells with 40nm well width, an applied electric field of 0.3meV∕nm enhances TC up to five times than ones without the applied field. Our results indicate that wide quantum wells (>20nm) have more advantage than narrow quantum wells in the electric-field-controlled low dimensional ferromagnetic systems.
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