Abstract
Metal oxides nanostructures are important materials involving in the development of gas detection systems, but most of them only working at elevated temperature. A diode based structure of p-type copper oxide (CuO) and n-type zinc oxide (ZnO) nanowires (NWs) on silicon, which posses rectifying I–V characteristic, was fabricated to overcome this drawback. Gas sensing characteristics of CuO NWs and ZnO NWs with and without diode structure have been examined by measuring the resistance change towards 0.5% methanol vapour at room temperature. The diode based structures showed significant improvement in sensing behaviours. The implementation of CuO NWs and ZnO NWs with diode based structures showed great enhancement in terms of sensitivity, reliability and recovery rate. The findings can contribute to the development of room temperature gas sensing system. The fabrication procedures and working principles of the diode structures are detailed in this paper.
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