Abstract
The crystalline silicon (c-Si) surface is passivated by sputtered hydrogenated amorphous silicon (a-Si:H) thin films. It is found that the passivation quality can be enhanced by increasing in situ hydrogen flow rate (fH). Combining the structural examination and the thermal annealing results, it is indicated that apart from the hydrogenation effect on the interfaces, the ordered amorphous network plays a key role in the enhancement of c-Si passivation quality.
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