Abstract
In this work, pure and Zn-doped ε-Ga2O3 films were grown by MOVCD. The improvement in the crystalline quality and the UV photodetection performance of ε-Ga2O3 was demonstrated by introducing Zn impurity. The mechanism is also studied and discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
