Abstract
Enhancement of the thermal diffusion rates of Cr and Fe in ZnSe/ZnS was studied using two different approaches. Enhancement of Cr diffusion in ZnSe was achieved by application of excess Zn atmosphere during the thermal diffusion of Cr, where ~2.2 times improvement in the diffusion coefficient was seen over the standard diffusion technique. Also, the diffusion coefficient of Fe in ZnSe and ZnS was improved by 13 and 14 times, respectively, when diffusion was done under hot isostatic pressing.
Highlights
The middle Infrared 2-20 μm region of the electromagnetic spectrum attracts a lot of interest
Enhancement of Cr diffusion in ZnSe was achieved by application of excess Zn atmosphere during the thermal diffusion of Cr, where ~2.2 times improvement in the diffusion coefficient was seen over the standard diffusion technique
The diffusion coefficient of Fe in ZnSe and ZnS was improved by 13 and 14 times, respectively, when diffusion was done under hot isostatic pressing
Summary
The middle Infrared (mid-IR) 2-20 μm region of the electromagnetic spectrum attracts a lot of interest. Based on computer simulations and theoretical considerations, it is predicted that the presence of interstitial cations may increase the diffusion rate in these crystals [5,6] This takes place because the energy barrier is lower for an interstitial to kick out a nodal cation into interstitial position, which, in turn, will cause another similar process and mediate the migration of the diffusing ion in the cation sublattice [5]. In our crystals this process should take place in the presence of interstitial Zn. the effects of excessive Zn, provided by co-annealing in Zn vapor, on diffusion characteristics of Cr in ZnSe were studied. Hot Isostatic Pressing was used as the means for simultaneous application of high temperature (up to 1300° C) and high pressure (up to 3000 atm) to study diffusion processes of Fe in ZnSe and ZnS
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