Abstract
Increasing the productivity of a showerhead-type capacitively coupled plasma (CCP) reactor requires an in-depth understanding of various physical phenomena related to the showerhead, which is not only responsible for gas distribution, but also acts as the electrode. Thus, we investigated how to enhance the cleanliness and deposition rate by studying the multiple roles of the showerhead electrode in a CCP reactor. We analyzed the gas transport in a three-dimensional complex geometry, and the SiH4/He discharges were simulated in a two-dimensional simplified geometry. The process volume was installed between the showerhead electrode (radio frequency powered) and the heater electrode (grounded). Our aim of research was to determine the extent to which the heated showerhead contributed to increasing the deposition rate and to reducing the size of the large particles generated during processing. The temperature of the showerhead was increased to experimentally measure the number of particles transported onto the heater to demonstrate the effects thereof on the decrease in contamination. The number of particles larger than 45 nm decreased by approximately 93% when the showerhead temperature increased from 373 to 553 K.
Highlights
We investigated how to enhance the cleanliness and deposition rate by aiming to understand the multiple roles of the showerhead electrode in a capacitively coupled plasma (CCP) reactor
The discharge volume was installed between the showerhead electrode and the heater electrode
We simulated the gas transport in a three-dimensional complex geometry, whereas the SiH4/He CCP discharges were considered in a simplified two-dimensional heater surface
Summary
Chip manufacturers have continuously targeted high production efficiency [3,4,5]. Towards this objective, showerhead-type capacitively coupled plasma (CCP) PECVD reactors operated in the torr regime are often considered the best configuration for performing challenging processes [6,7,8]. Showerhead-type capacitively coupled plasma (CCP) PECVD reactors operated in the torr regime are often considered the best configuration for performing challenging processes [6,7,8] This is because these reactors have the ability to deposit films with specified properties and with high uniformity
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