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Abstract
Enhancement of cathodoluminescence of manganese-activated zinc gallate (ZnGa2O4:Mn) thin-film phosphor by energetic particle bombardment is reported. The ZnGa2O4:Mn thin-film phosphor was grown at room temperature on silicon (100) substrates by rf magnetron sputter deposition from a 2 mol % Mn-doped ZnGa2O4 target in an oxygen–argon mixture. After the deposition, the films were annealed at 800 °C for 3 h in air. The influence of energetic particle bombardment on cathodoluminescent (CL) properties of ZnGa2O4:Mn films was investigated by varying a gas pressure during the sputter growth. Our results have shown that CL brightness from ZnGa2O4:Mn films grown at 2 mTorr was more than eight times higher than that of films grown at 20 mTorr. The remarkable improvement in CL brightness from ZnGa2O4:Mn films grown at a low pressure is presumably due to the energetic particle bombardment of the growing film surface yielding a densely packed microstructure and a better crystalline quality with a highly [110]-textured structure.
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