Abstract
MgIn 2O 4 thin films were prepared by pulsed laser deposition technique under 1.0×10 −1–1.0×10 −5 Torr of oxygen pressure. Dependence on the oxygen pressure during the deposition were investigated of dc electrical conductivity, carrier concentration and mobility of electrons in the films. Carrier generation in the films was enhanced with decreasing oxygen pressure. The maximum dc electrical conductivity of the film at room temperature reached 1.3×10 3 S cm −1, the carrier concentration was 3.6×10 21 cm −3 and mobility was 2.4 cm 2 V −1 s −1.
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