Abstract
The optical properties of heavily Mg-doped GaN activated at low temperature in O2/N2 mixtures were investigated using room-temperature photoluminescence (PL), excitation density-dependent PL and temperature-dependent PL. It was found that the emission intensity of Mg-doped GaN was dramatically enhanced after samples were annealed in N2 and O2 mixed gas. In particular, when a sample was annealed in a mixture of gases of 10% O2 + 90% N2, it displayed a very strong emission intensity, about 10 times stronger than that of an as-grown sample; however, the intensity of Mg-doped GaN decreases again on further increasing the ratio of oxygen in the annealing atmosphere. According to the result of excitation density-dependent PL, a simple model of the mechanism of enhanced emission intensity of Mg-doped GaN annealed in O2 and N2 is proposed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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