Abstract
It is shown that localized emission from GaInNAs quantum wells (QW) is composed of sharp photoluminescence (PL) lines. Spectral position of these PL lines varies in a very broad range (∼150 meV) but the activation energy of each line is the same within the experimental uncertainty and equals ∼11 meV. This value is higher than in bulk GaInNAs (∼6 meV) and corresponds very well to electron–hole attraction in GaInNAs QW. It means that the source of these sharp PL lines are excitons localized on deep centres, which can recombine radiatively while the thermal energy is smaller than the Coulomb attraction between electrons and holes. Because of this the localized emission composing of sharp PL lines is observed at low temperatures and quenched much faster for GaInNAs layers than GaInNAs/GaAs QWs.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
