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Abstract
Characteristics of the pseudomorphic inverted HEMT (P-I-HEMT) are compared with those of the pseudomorphic HEMT. Both devices were fabricated in enhancement mode by the same process. P-I-HEMT shows a higher maximum transconductance of 590 mS/mm, and higher K-value of 600 mS/Vmm at a threshold voltage of O V, and better pinch-off characteristics than its counterpart. Noise characteristics of P-I-HEMT are reported. Lower noise figure (1.0 dB at 18 GHz) was obtained in the P-I-HEMT. It is concluded that the P-I-HEMT shows far better noise characteristics than the other at low drain voltage and current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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