Abstract
The quaternary InAlGaN-barrier GaN MOS-HEMT (high-electron-mobility transistor) with enhancement mode operation was displayed as Vth=0.65V and the maximum drain current ~ 40 mA/mm at VDS=10V with LG=15μm and LGD=20μm. The measured rocking-curve and RSM (reciprocal space mapping) for epitaxial quality was confirmed the composition of the quaternary and analyzed the relaxation between InAlGaN-barrier and GaN Buffer layer. The surface roughness of InAlGaN was observed by AFM (Atomic force microscopy). The positive polarity of Vth was obtained with the gate lengths 3-30μm, and short channel effect was discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
