Abstract
A self-aligned gate notched channel GaAs m.o.s.f.e.t. structure on semi-insulating substrate is presented. Device operation is mainly in enhancement mode. The transconductance is comparable to enhancement-mode m.e.s.f.e.t.s, j.f.e.t.s and s.i.g.f.e.t.s; however, the output-current capability is essentially increased.
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