Abstract
Structure-engineered silicon exhibits a wealth of unique optical properties below its bandgap, which holds promise for mid-infrared and terahertz applications such as photodetection, thermophotovoltaics, radiative cooling, and spectroscopy. In this paper, we investigate enhancement mechanisms of sub-bandgap absorption of black silicon fabricated into periodic pyramids. Our measurements indicate that the pyramid structure leads to an enhanced broadband absorption in the wavelength region from 1.5 to 13.07 μm with an efficiency of over 80%. The broadband absorption enhancement is shown to originate from the Rayleigh–Wood anomaly, localized magnetic plasmonic resonance, and graded-index effect, which together facilitate the interaction between light and free-carriers in silicon. These results are helpful for understanding the interaction between light and black silicon.
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