Abstract
Influences of the carrier concentration and mobility of heavily doped n-type Si80 Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoelectrical power factors of 32–36μW cm−1 K−2 could be consistently achieved with carrier concentrations of 2.1–2.9 × 1020 cm−3 and carrier mobilities of 36–40 cm2 V−1 s−1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.
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