Abstract
Porous silicon (PS) with thin silver (Ag) coatings was prepared using a two-step method of electrochemical anodization of silicon followed by sputter-deposition of a silver lm. The photoluminescence (PL) and the transmittance properties of the Ag/PS samples were evaluated by using PL spectroscopy and UV/VIS spectrometry, respectively. Fourier-transform infrared (FTIR) spectroscopy and X-ray photoelectron emission spectroscopy (XPS) analyses were also performed to investigate the origin of the PL enhancement caused by the Ag deposition. The PL intensity for the PS was increased by deposition of an Ag lm. The optimum Ag lm thickness for enhancement of the PL from PS was 9.2 nm and the net increase in the intensity of the light emitting from the Ag-coated PS was about 78 %. FTIR and XPS analysis results suggest that the PL enhancement caused by Ag the lm's deposition is attributed to a change in the bond structure from Si-H bonds to Si-Ag bonds and to an increase in the charge carrier concentration. The deterioration of the PL from the Ag-coated PS by thermal annealing is ascribed to coalescence of the PS layer.
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