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Abstract
We investigated the enhanced photoresponse of ZnO nanowire transistors that wasintroduced with surface-roughness-induced traps by a simple chemical treatment withisopropyl alcohol (IPA). The enhanced photoresponse of IPA-treated ZnO nanowiredevices is attributed to an increase in adsorbed oxygen on IPA-induced surfacetraps. The results of this study revealed that IPA-treated ZnO nanowire devicesdisplayed higher photocurrent gains and faster photoswitching speed than transistorscontaining unmodified ZnO nanowires. Thus, chemical treatment with IPA canbe a useful method for improving the photoresponse of ZnO nanowire devices.
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