Abstract
Integrating of ferroelectric thin films with two-dimensional materials may provide a novel and unique characteristics in the field of optoelectronics due to the coupling of their distinctive intrinsic features. A heterostructure (bismuth ferrite/zinc oxide) device is fabricated with different types of the electrode to enhance the power conversion efficiency (PCE). A single-phase multiferroic BFO thin film is grown by atomic layer deposition (ALD) method and annealed in different environments such as helium, nitrogen, and oxygen. We investigated the effect of annealing parameters and different types of electrodes on solar cell applications. We observed that the leakage current 10 orders of magnitude was reduced by decreasing in the dielectric loss. Further, the power conversion efficiency (PCE) is improved from 4.1% to 7.4% with a hybrid transparent electrode (graphene/indium tin oxide). The value of PCE is further increased at a low temperature. So, the improvement in the key parameter of bismuth ferrite thin-film evidently highlights the importance of annealing atmosphere and graphene as an electrode in BFO thin film applications in optoelectronics.
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