Abstract
The gated polysilicon field emitter arrays coated with diamondlike carbon (DLC) were fabricated by a transfer mold method using anisotropic etching of Si and the deposition of DLC using methane ion beam. This paper describes significant enhancement in electron emission and considerable reduction in turn-on voltage for the emitter arrays by the DLC coating. In addition, the paper discusses the emission mechanism from the energy band diagram of a field emitter coated with a sufficiently thin dielectric material having a low electron affinity, and shows that an effective work function of the DLC coated polysilicon field emitter is about 2.9 eV.
Published Version
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