Abstract
In this work, ZnO nanorods (NRs) were doped with (0, 3, and 6)% Mn and grown on the glass slide by the Microwave-Assisted Chemical Bath Deposition (MACBD) method, at 80 °C. Al contacts were evaporated on the prepared thin film by thermal evaporation technique to produce metal-semiconductor-metal detector (MSM). The novelty of this work is to obtain a UV detector device that works at room temperature using a simple method and low synthesis temperature. The structural properties and the surface morphology of the prepared samples were investigated. The XRD results of un-doped and Mn-doped Zinc Oxide (MZO) NRs reveals sharp and strong peaks, confirming high crystallinity structure. The FE-SEM images showed that the Zinc Oxide NRs were good-aligned and well distributed throughout the glass substrate. At a room temperature, the fabricated detectors were showed an important difference among the current density of the UV wavelengths 365 nm, 385 nm and dark current density. Under 5 V of the applied source voltage, the responsivity of MSM photodetectors based on MZO (0, 3, and 6)% were (0.0361, 0.044 and 0.0765) A/W at a wavelength 365 nm, (0.0232 and 0.0324 and 0.0391) at UV wavelength of 385 nm, at power density of 40 μW/cm2, respectively. All devices in this work demonstrated high response to the UV radiation and showed almost no response to the visible spectrum.
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