Abstract
The effects of H2O prepulsing treatments on the bottom Pt electrode of metal-insulator-metal (MIM) capacitors prior to HfO2 atomic layer deposition (ALD) were investigated for the first time. We demonstrated a MIM capacitor with capacitance density of 9 fF/μm2, quadratic voltage coefficient of capacitance (VCC) α of 499 ppm/V2 and low leakage current density of 5×10-8 A/cm2 at 1V. X-ray photoelectron spectroscopy (XPS) results reveal that the surfaces of the bottom Pt electrode were partially hydroxylated, which is considered as able to reduce the oxygen vacancies.
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