Abstract
In characterizing the electrical properties of individual NWs (nanowires), the amorphous oxide layer on the surface of NWs is known to limit the electrical conductivity owing to the contact barriers between metal electrodes and NWs. To remove the native oxide layer, a systematic reactive ion etching (RIE) was performed, resulting in a gradual decrease of the diameters of NWs. Voltage-current characteristics of the GaN NW devices treated by tuning the RIE process were improved as reflected by a 1000 times increase in conductance, which was in turn attributed to the removal of the thick (d∼3.5nm) contact barrier formed by the native oxide layer.
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