Abstract
Silicon diodes with large aspect ratio perforated microstructures backfilled with 6 LiF show a dramatic increase in neutron detection efficiency beyond that of conventional thin-film coated planar devices. Described in this work are advancements in the technology with increased microstructure depths and detector stacking methods to increase thermal neutron detection efficiency. The highest efficiency devices thus far have delivered over 37% intrinsic thermal neutron detection efficiency by device-coupling stacking methods. The detectors operate as conformally diffused pn junction diodes with 1 cm 2 square-area. Two individual devices were mounted back-to-back with counting electronics coupling the detectors together into a single dual-detector device. The solid-state silicon device operated at 3 V and utilized simple signal amplification and counting electronic components. The intrinsic detection efficiency for normal-incident 0.0253 eV neutrons was found by calibrating against a 3 He proportional counter and a 6 LiF thin-film planar semiconductor device. This work is a part of on-going research to develop solid-state semiconductor neutron detectors with high detection efficiencies and uniform angular responses.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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