Abstract
GaAs p+–n+ junctions with and without a layer of InAs quantum dots (QDs) embedded at the interface are discussed in this article. The current density versus voltage (I–V) characteristics show that the junctions without QDs are weak degenerate due to the Beryllium(Be) atoms diffusion of nominal p++-GaAs; the junctions with QDs generate enhanced tunneling current at forward bias, because the QDs layer reduces the Be diffusion and enables a two-step tunneling process. At room temperature, the current density of the sample with QDs is enhanced to 122 A cm−2 at a forward bias of +0.32 V, which is about 2 orders of magnitude higher than the reference sample without QDs.
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