Enhanced tunneling current and low contact resistivity at Mg contacts on heavily phosphorus-ion-implanted SiC

Abstract

Mg contacts are formed on P+-implanted SiC (1 × 1017–8 × 1019 cm−3) and their current–voltage characteristics and contact resistivity (ρ c) are analyzed. The current density through the contacts on the ion-implanted SiC is several orders of magnitude larger than that on SiC epitaxial layers with the same doping density. For the Mg contacts formed on ion-implanted SiC with 8 × 1019 cm−3, a very low ρ c of 2 × 10−6 Ωcm2, which is comparable to that of typical Ni-based contacts sintered at high temperature, is achieved without any thermal treatment after electrode deposition.